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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17364

Title: Growth and Performance Study of Aluminum-free InGaAs/GaAs/InGaAsP Strained Quantum Well Pump Lasers
Authors: Shiao, Hung-Pin;Lee, Hsin-Ying;Lin, Yow-Jon;Tu, Yuan-Kuang;Lee, Ching-Ting
Contributors: 光電科技研究所
Keywords: Aluminum-free pump lasers;OMVPE epitaxial growth;Photoluminescence;Strained quantum-well lasers;Transmission electron microscopy
Date: 2001-11
Issue Date: 2013-10-02T08:35:45Z
Publisher: The Japan Society of Applied Physics
Abstract: The growth of InGaP, InGaAs and InGaAsP epilayers lattice matched to GaAs using the low pressure organometallic vapor phase epitaxy (LP-OMVPE) system was investigated. For the application of erbium-doped fiber amplifiers (EDFAs), the emission wavelength and far-field pattern of the pump laser were designed. The optical and electrical performances of the resultant pump laser were measured.
Relation: Japanese Journal of Applied Physics, 40(11): 6384-6390
Appears in Collections:[光電科技研究所] 期刊論文

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