English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6458/11630
Visitors : 13701236      Online Users : 468
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17365

Title: Investigation of Oxidation Mechanism for Ohmic Formation in Ni/Au Contacts to p-type GaN Layers
Authors: Lee, Chi-Sen;Lin, Yow-Jon;Lee, Ching-Ting
Contributors: 光電科技研究所
Keywords: Nickel;Gold;Oxidation;Ohmic contacts;Contact resistance;Gallium compounds;Surface treatment;Semiconductor-metal boundaries,III-V semiconductors;Wide band gap semiconductors;X-ray photoelectron spectra
Date: 2001-12
Issue Date: 2013-10-02T08:35:47Z
Publisher: American Institute of Physics
Abstract: To investigate the function and mechanisms of oxidation, we present the ohmic performances for Ni/Au contacts to p-type GaN treated with various conditions. When the p-type GaN sample was preoxidized at 750 °C for 30 min in air ambient and then treated with (NH4)2Sx solution, we routinely obtained a specific contact resistance of 4.5×10−6 Ω cm2 for the Ni/Au contacts to samples alloyed at 500 °C for 10 min in air ambient. The fact that, in this configuration, ohmic performance improved one order of magnitude [compared with (NH4)2Sx surface treatment], is attributable to the strengthened formation of GaOx (aided by the preoxidation process), as well as the fact that more holes were induced on the oxidation-free p-type GaN surface.
Relation: Applied Physics Letters, 79(23): 3815-3817
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML296View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback