National Changhua University of Education Institutional Repository : Item 987654321/17365
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 29937275      在线人数 : 559
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/17365

题名: Investigation of Oxidation Mechanism for Ohmic Formation in Ni/Au Contacts to p-type GaN Layers
作者: Lee, Chi-Sen;Lin, Yow-Jon;Lee, Ching-Ting
贡献者: 光電科技研究所
关键词: Nickel;Gold;Oxidation;Ohmic contacts;Contact resistance;Gallium compounds;Surface treatment;Semiconductor-metal boundaries,III-V semiconductors;Wide band gap semiconductors;X-ray photoelectron spectra
日期: 2001-12
上传时间: 2013-10-02T08:35:47Z
出版者: American Institute of Physics
摘要: To investigate the function and mechanisms of oxidation, we present the ohmic performances for Ni/Au contacts to p-type GaN treated with various conditions. When the p-type GaN sample was preoxidized at 750 °C for 30 min in air ambient and then treated with (NH4)2Sx solution, we routinely obtained a specific contact resistance of 4.5×10−6 Ω cm2 for the Ni/Au contacts to samples alloyed at 500 °C for 10 min in air ambient. The fact that, in this configuration, ohmic performance improved one order of magnitude [compared with (NH4)2Sx surface treatment], is attributable to the strengthened formation of GaOx (aided by the preoxidation process), as well as the fact that more holes were induced on the oxidation-free p-type GaN surface.
關聯: Applied Physics Letters, 79(23): 3815-3817
显示于类别:[光電科技研究所] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML679检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈