National Changhua University of Education Institutional Repository : Item 987654321/17366

English | 正體中文 | 简体中文 | Items with full text/Total items : 6507/11669
Visitors : 29957565 Online Users : 543

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17366

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17366

Title:	Surface Band Bending, Nitrogen-vacancy-related Defects, and 2.8-eV Photoluminescence Band of (NH4)�2Sx-treated p-GaN
Authors:	Lin, Yow-Jon;Wang, Zhi-Long;Chang, Hsing-Cheng
Contributors:	光電科技研究所
Keywords:	Gallium compounds;Surface treatment;Surface states;Photoluminescence;X-ray photoelectron spectra;III-V semiconductors;Wide band gap semiconductors;Vacancies (crystal);Core levels;Ohmic contacts;Schottky barriers;Semiconductor-metal boundaries
Date:	2002-12
Issue Date:	2013-10-02T08:35:48Z
Publisher:	American Institute of Physics
Abstract:	We have employed the photoluminescence and x-ray photoelectron spectroscopy measurements to study the effects of (NH4)2Sx treatment on the p-type GaN (p-GaN). After (NH4)2Sx treatment, we found that the reduction of the surface state, related to nitrogen-vacancy defects on the p-GaN surface, led to a reduction in surface band bending by 0.25 eV. The surface band bending reduction and surface state reduction caused by the (NH4)2Sx surface treatment could be useful for the formation of ohmic and Schottky contacts between the metal and p-GaN layers. In addition, the intensity of the 2.8-eV photoluminescence band depended on the amount of nitrogen vacancy of p-GaN, which was also investigated in this study.
Relation:	Applied Physics Letters, 81(27): 5183-5185
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	690	View/Open