National Changhua University of Education Institutional Repository : Item 987654321/17366
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6507/11669
造訪人次 : 29947020      線上人數 : 595
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋

請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/17366

題名: Surface Band Bending, Nitrogen-vacancy-related Defects, and 2.8-eV Photoluminescence Band of (NH4)�2Sx-treated p-GaN
作者: Lin, Yow-Jon;Wang, Zhi-Long;Chang, Hsing-Cheng
貢獻者: 光電科技研究所
關鍵詞: Gallium compounds;Surface treatment;Surface states;Photoluminescence;X-ray photoelectron spectra;III-V semiconductors;Wide band gap semiconductors;Vacancies (crystal);Core levels;Ohmic contacts;Schottky barriers;Semiconductor-metal boundaries
日期: 2002-12
上傳時間: 2013-10-02T08:35:48Z
出版者: American Institute of Physics
摘要: We have employed the photoluminescence and x-ray photoelectron spectroscopy measurements to study the effects of (NH4)2Sx treatment on the p-type GaN (p-GaN). After (NH4)2Sx treatment, we found that the reduction of the surface state, related to nitrogen-vacancy defects on the p-GaN surface, led to a reduction in surface band bending by 0.25 eV. The surface band bending reduction and surface state reduction caused by the (NH4)2Sx surface treatment could be useful for the formation of ohmic and Schottky contacts between the metal and p-GaN layers. In addition, the intensity of the 2.8-eV photoluminescence band depended on the amount of nitrogen vacancy of p-GaN, which was also investigated in this study.
關聯: Applied Physics Letters, 81(27): 5183-5185
顯示於類別:[光電科技研究所] 期刊論文

文件中的檔案:

檔案 大小格式瀏覽次數
index.html0KbHTML690檢視/開啟


在NCUEIR中所有的資料項目都受到原著作權保護.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋