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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17367

Title: Nonalloyed Ohmic Mechanism of TiN Interfacial Layer in Ti/Al Contacts to (NH4)�2Sx-treated n-type GaN Layers
Authors: Lee, Ching-Ting;Lin, Yow-Jon;Lin, Chun-Hung
Contributors: 光電科技研究所
Keywords: Aluminium;Titanium;Titanium compounds;Gallium compounds;Ohmic contacts;Semiconductor-metal boundaries;III-V semiconductors;X-ray photoelectron spectra;Core levels;Wide band gap semiconductors;Vacancies (crystal);Surface treatment;Work function
Date: 2002-10
Issue Date: 2013-10-02T08:35:49Z
Publisher: American Institute of Physics
Abstract: We investigate the nonalloyed ohmic contact of Ti/Al contacts to (NH4)2Sx-treated n-type GaN layers using x-ray photoelectron spectroscopy analysis. The native oxide on the n-type GaN surface can be completely removed by (NH4)2Sx solution. The resultant Ga/N ratio was decreased. The deposited Ti is in intimate contact with the (NH4)2Sx-treated n-type GaN layer. As a result, the TiN interlayer, which has a low work function and low electrical resistivity, is formed easily. The nonalloyed ohmic mechanism results from the formation of a TiN interlayer and the creation of nitrogen vacancies due to the nitrogen outdiffusion from the n-type GaN layer. The nonalloyed ohmic behavior of the as-deposited Ti/Al contacts with (NH4)2Sx-treated GaN layer was associated with Al/Ti/TiN/n-type GaN.
Relation: Journal of Applied Physics, 92(7): 3825-3829
Appears in Collections:[光電科技研究所] 期刊論文

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