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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17368

Title: Investigation of Degradation for Ohmic Performance of Oxidized Au/Ni/Mg-doped GaN
Authors: Lin, Yow-Jon;Li, Zhen-Dao;Hsu, Chou-Wei;Chien, Feng-Tso;Lee, Ching-Ting;Shao, Sheng-Tien;Chang, Hsing-Cheng
Contributors: 光電科技研究所
Keywords: Gold;Nickel;Gallium compounds;Magnesium;III-V semiconductors;Wide band gap semiconductors;Ohmic contacts;Semiconductor-metal boundaries;Oxidation;Annealing;Hole density;Contact resistance
Date: 2003-04
Issue Date: 2013-10-02T08:35:50Z
Publisher: American Institute of Physics
Abstract: The mechanism of ohmic contact degradation for the oxidized Au/Ni/Mg-doped GaN under various annealing times has been investigated. According to the results from x-ray photoelectron spectroscopy and the Cserveny’s concept, we found that an increase of hole concentration of NiOx would lead to the increasing barrier height and the increasing specific contact resistance (ρc) of oxidized Au/Ni/Mg-doped GaN. This suggests that the NiOx plays an important role in increasing (or reducing) the ρc of oxidized Au/Ni/Mg-doped GaN.
Relation: Applied Physics Letters, 82(17): 2817-2819
Appears in Collections:[光電科技研究所] 期刊論文

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