National Changhua University of Education Institutional Repository : Item 987654321/17368
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6507/11669
造訪人次 : 29897117      線上人數 : 305
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋

請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/17368

題名: Investigation of Degradation for Ohmic Performance of Oxidized Au/Ni/Mg-doped GaN
作者: Lin, Yow-Jon;Li, Zhen-Dao;Hsu, Chou-Wei;Chien, Feng-Tso;Lee, Ching-Ting;Shao, Sheng-Tien;Chang, Hsing-Cheng
貢獻者: 光電科技研究所
關鍵詞: Gold;Nickel;Gallium compounds;Magnesium;III-V semiconductors;Wide band gap semiconductors;Ohmic contacts;Semiconductor-metal boundaries;Oxidation;Annealing;Hole density;Contact resistance
日期: 2003-04
上傳時間: 2013-10-02T08:35:50Z
出版者: American Institute of Physics
摘要: The mechanism of ohmic contact degradation for the oxidized Au/Ni/Mg-doped GaN under various annealing times has been investigated. According to the results from x-ray photoelectron spectroscopy and the Cserveny’s concept, we found that an increase of hole concentration of NiOx would lead to the increasing barrier height and the increasing specific contact resistance (ρc) of oxidized Au/Ni/Mg-doped GaN. This suggests that the NiOx plays an important role in increasing (or reducing) the ρc of oxidized Au/Ni/Mg-doped GaN.
關聯: Applied Physics Letters, 82(17): 2817-2819
顯示於類別:[光電科技研究所] 期刊論文

文件中的檔案:

檔案 大小格式瀏覽次數
index.html0KbHTML665檢視/開啟


在NCUEIR中所有的資料項目都受到原著作權保護.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋