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題名: Investigation of Degradation for Ohmic Performance of Oxidized Au/Ni/Mg-doped GaN
作者: Lin, Yow-Jon;Li, Zhen-Dao;Hsu, Chou-Wei;Chien, Feng-Tso;Lee, Ching-Ting;Shao, Sheng-Tien;Chang, Hsing-Cheng
貢獻者: 光電科技研究所
關鍵詞: Gold;Nickel;Gallium compounds;Magnesium;III-V semiconductors;Wide band gap semiconductors;Ohmic contacts;Semiconductor-metal boundaries;Oxidation;Annealing;Hole density;Contact resistance
日期: 2003-04
上傳時間: 2013-10-02T08:35:50Z
出版者: American Institute of Physics
摘要: The mechanism of ohmic contact degradation for the oxidized Au/Ni/Mg-doped GaN under various annealing times has been investigated. According to the results from x-ray photoelectron spectroscopy and the Cserveny’s concept, we found that an increase of hole concentration of NiOx would lead to the increasing barrier height and the increasing specific contact resistance (ρc) of oxidized Au/Ni/Mg-doped GaN. This suggests that the NiOx plays an important role in increasing (or reducing) the ρc of oxidized Au/Ni/Mg-doped GaN.
關聯: Applied Physics Letters, 82(17): 2817-2819
顯示於類別:[光電科技研究所] 期刊論文


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