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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17369

Title: Mechanism Investigation of NiOx in Au/Ni/p-Type GaN Ohmic Contacts Annealed in Air
Authors: Lee, Ching-Ting;Lin, Yow-Jon;Lee, Tsung-Hsin
Contributors: 光電科技研究所
Keywords: Gallium nitride (GaN);Nickel oxide (NiOx);Ohmic contacts;Thermal annealing;X-ray photoelectron spectroscopy (XPS)
Date: 2003-05
Issue Date: 2013-10-02T08:35:53Z
Publisher: Springer-Verlag
Abstract: Recently, Au/Ni/p-type GaN ohmic contacts annealed in an air ambient have been widely investigated. However, to obtain a low specific-contact resistance, the annealing window is limited. In this study, to understand the oxidation function of metallic Ni, the Au/Ni/p-type GaN structure was annealed in an air ambient for 10 min at various temperatures. Using x-ray photoelectron spectroscopy (XPS) analysis, the metallic Ni was oxidized into NiO and NiO1.3 compositions at annealing temperatures of 500�C and 600�C, respectively. However, metallic Ni still existed on the interface of the Ni/p-type GaN annealed at 400�C. The associated barrier heights of 0.42 eV, 0.21 eV, and 0.31 eV were obtained with p-type GaN for the Ni, NiO, and NiO1.3 contacts, respectively. The hole concentrations of p-type NiO and p-type NiO1.3 were 2.6 1016 cm 3 and 2.0 1018 cm 3, respectively. The lower hole concentration of the p-type NiO would lead to reducing the valence-band bending of the p-type GaN, as well as the barrier height for holes crossing from the p-type NiO to the p-type GaN. The formation of NiO was thus an important issue for lowering the specific-contact resistance of the Au/Ni/p-type GaN ohmic contacts annealed in an air ambient.
Relation: Journal of Electronic Materials, 32(5): 341-345
Appears in Collections:[光電科技研究所] 期刊論文

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