English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6480/11652
Visitors : 20717389      Online Users : 117
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17370

Title: Investigation of Accumulated Carrier Mechanism on Sulfurated GaN Layers
Authors: Lin, Yow-Jon;Lee, Chi-Sen;Lee, Ching-Ting
Contributors: 光電科技研究所
Keywords: Gallium compounds;III-V semiconductors;Wide band gap semiconductors;Ammonium compounds;Electron density;Vacancies (crystal);Semiconductor epitaxial layers;Contact resistance;Semiconductor-metal boundaries;Ohmic contacts
Date: 2003-05
Issue Date: 2013-10-02T08:35:54Z
Publisher: American Institute of Physics
Abstract: We study the induced electron concentration accumulated on the sulfurated layer of the (NH4)2Sx- treated n-type GaN layers using a simple resistance model. The electron concentration within the sulfurated layer increased from its original value of 6.9×1017 cm−3 to 8.2×1019 cm−3. The induced electrons are attributable to the sulfur atoms occupying nitrogen vacancies. An increase in the induced electron concentration could play an important role in lowering the specific contact resistance of Ti/Al contacts with the (NH4)2Sx-treated n-type GaN layer.
Relation: Journal of Applied Physics, 93(9): 5321-5324
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML352View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback