National Changhua University of Education Institutional Repository : Item 987654321/17370
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 6507/11669
造訪人次 : 29939242      線上人數 : 493
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋

請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/17370

題名: Investigation of Accumulated Carrier Mechanism on Sulfurated GaN Layers
作者: Lin, Yow-Jon;Lee, Chi-Sen;Lee, Ching-Ting
貢獻者: 光電科技研究所
關鍵詞: Gallium compounds;III-V semiconductors;Wide band gap semiconductors;Ammonium compounds;Electron density;Vacancies (crystal);Semiconductor epitaxial layers;Contact resistance;Semiconductor-metal boundaries;Ohmic contacts
日期: 2003-05
上傳時間: 2013-10-02T08:35:54Z
出版者: American Institute of Physics
摘要: We study the induced electron concentration accumulated on the sulfurated layer of the (NH4)2Sx- treated n-type GaN layers using a simple resistance model. The electron concentration within the sulfurated layer increased from its original value of 6.9×1017 cm−3 to 8.2×1019 cm−3. The induced electrons are attributable to the sulfur atoms occupying nitrogen vacancies. An increase in the induced electron concentration could play an important role in lowering the specific contact resistance of Ti/Al contacts with the (NH4)2Sx-treated n-type GaN layer.
關聯: Journal of Applied Physics, 93(9): 5321-5324
顯示於類別:[光電科技研究所] 期刊論文

文件中的檔案:

檔案 大小格式瀏覽次數
index.html0KbHTML606檢視/開啟


在NCUEIR中所有的資料項目都受到原著作權保護.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋