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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17371

Title: Comment on“Thermally Stable Ir Schottky Contact on AlGaN/GaN Heterostructure”[Appl. Phys. Lett. 82, 391 (2003)]
Authors: Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: Aluminium compounds;Gallium compounds;Wide band gap semiconductors;Semiconductor heterojunctions;Iridium, Schottky barriers;Semiconductor-metal boundaries;Work function
Date: 2003-08
Issue Date: 2013-10-02T08:35:56Z
Publisher: American Institute of Physics
Relation: Applied Physics Letters, 83(6): 1272
Appears in Collections:[光電科技研究所] 期刊論文

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