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NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17371

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17371

Title:	Comment on“Thermally Stable Ir Schottky Contact on AlGaN/GaN Heterostructure”[Appl. Phys. Lett. 82, 391 (2003)]
Authors:	Lin, Yow-Jon
Contributors:	光電科技研究所
Keywords:	Aluminium compounds;Gallium compounds;Wide band gap semiconductors;Semiconductor heterojunctions;Iridium, Schottky barriers;Semiconductor-metal boundaries;Work function
Date:	2003-08
Issue Date:	2013-10-02T08:35:56Z
Publisher:	American Institute of Physics
Relation:	Applied Physics Letters, 83(6): 1272
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

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