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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17372

Title: Nitrogen-vacancy-related Defects and Fermi Level Pinning in n-GaN Schottky Diodes
Authors: Lin, Yow-Jon;Ker, Quantum;Ho, Ching-Yao;Chang, Hsing-Cheng;Chien, Feng-Tso
Contributors: 光電科技研究所
Keywords: Schottky diodes;Fermi level;Schottky barriers;Semiconductor-metal boundaries;Surface states;Vacancies (crystal);Defect states;Gallium compounds,III-V semiconductors;Wide band gap semiconductors;Nickel;Gold;X-ray photoelectron spectra;Capacitance;Conduction bands
Date: 2003-08
Issue Date: 2013-10-02T08:35:57Z
Publisher: American Institute of Physics
Abstract: The relationship between the surface states related to nitrogen-vacancy defects and surface Fermi level pinning has been investigated using x-ray photoelectron spectroscopy and capacitance–voltage measurements. Barrier heights of 1.09, 0.50, 1.20, and 0.50 eV, respectively, were obtained for Ni/(NH4)2Sx-treated n-GaN, Ni/etched n-GaN, Au/(NH4)2Sx-treated n-GaN and Au/etched n-GaN Schottky diodes. For Schottky diodes treated with (NH4)2Sx, the observed Schottky barrier height is very close to the Schottky limit, due to the reduction of the surface state density. This also suggests that a large number of surface states related to nitrogen-vacancy defects in the etched n-GaN surface would lead to the pinning of the Fermi level at 0.50 eV below the conduction band edge.
Relation: Journal of Applied Physics, 94(3): 1819-1822
Appears in Collections:[光電科技研究所] 期刊論文

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