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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17373

Title: Comment on “Enhancement of Schottky Barrier Height on AlGaN/GaN Heterostructure by Oxidation Annealing” [Appl. Phys. Lett. 82, 4301 (2003)]
Authors: Lin, Yow-Jon;Wu, Kuo-Chen
Contributors: 光電科技研究所
Keywords: Aluminium compounds;Gallium compounds;III-V semiconductors;Wide band gap semiconductors;Schottky barriers;Work function;Electron affinity;Oxidation;Surface diffusion;Vacancies (crystal);Energy gap;Semiconductor heterojunctions;Annealing
Date: 2003-12
Issue Date: 2013-10-02T08:35:58Z
Publisher: American Institute of Physics
Relation: Applied Physics Letters, 83(25): 5319-5320
Appears in Collections:[光電科技研究所] 期刊論文

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