English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6480/11652
Visitors : 20146370      Online Users : 196
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17374

Title: Schottky Barrier Height and Nitrogen-vacancy-related Defects in Ti Alloyed Ohmic Contacts to n-GaN
Authors: Lin, Yow-Jon;Chen, Yao-Ming;Cheng, Tzyy-Jon;Ker, Quantum
Contributors: 光電科技研究所
Keywords: Titanium;Gallium compounds;III-V semiconductors;Wide band gap semiconductors;Semiconductor-metal boundaries;Ohmic contacts;Schottky barriers;Vacancies (crystal);X-ray photoelectron spectra;Annealing;Interface states;Defect states;Fermi level;Tunnelling
Date: 2004-01
Issue Date: 2013-10-02T08:35:59Z
Publisher: American Institute of Physics
Abstract: The relationship between the Schottky barrier height and nitrogen–vacancy-related defects in Ti alloyed Ohmic contacts to n-type GaN (n-GaN) has been investigated using x-ray photoelectron spectroscopy measurements. It is shown that the alloyed Ohmic behavior of the contacts can be attributed to the presence of a large number of nitrogen–vacancy-related defects and not to the formation of lower barriers at the annealed Ti/n-GaN interface. The large number of interface states, related to the nitrogen–vacancy defects has led to the pinning of the Fermi level at 0.5 eV below the conduction-band edge, and has left the GaN surface very heavily n type, thereby forming a tunneling junction.
Relation: Journal of Applied Physics, 95(2): 571-575
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML431View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback