National Changhua University of Education Institutional Repository : Item 987654321/17374

English | 正體中文 | 简体中文 | Items with full text/Total items : 6507/11669
Visitors : 30050736 Online Users : 713

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17374

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17374

Title:	Schottky Barrier Height and Nitrogen-vacancy-related Defects in Ti Alloyed Ohmic Contacts to n-GaN
Authors:	Lin, Yow-Jon;Chen, Yao-Ming;Cheng, Tzyy-Jon;Ker, Quantum
Contributors:	光電科技研究所
Keywords:	Titanium;Gallium compounds;III-V semiconductors;Wide band gap semiconductors;Semiconductor-metal boundaries;Ohmic contacts;Schottky barriers;Vacancies (crystal);X-ray photoelectron spectra;Annealing;Interface states;Defect states;Fermi level;Tunnelling
Date:	2004-01
Issue Date:	2013-10-02T08:35:59Z
Publisher:	American Institute of Physics
Abstract:	The relationship between the Schottky barrier height and nitrogen–vacancy-related defects in Ti alloyed Ohmic contacts to n-type GaN (n-GaN) has been investigated using x-ray photoelectron spectroscopy measurements. It is shown that the alloyed Ohmic behavior of the contacts can be attributed to the presence of a large number of nitrogen–vacancy-related defects and not to the formation of lower barriers at the annealed Ti/n-GaN interface. The large number of interface states, related to the nitrogen–vacancy defects has led to the pinning of the Fermi level at 0.5 eV below the conduction-band edge, and has left the GaN surface very heavily n type, thereby forming a tunneling junction.
Relation:	Journal of Applied Physics, 95(2): 571-575
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	696	View/Open