National Changhua University of Education Institutional Repository : Item 987654321/17374
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题名: Schottky Barrier Height and Nitrogen-vacancy-related Defects in Ti Alloyed Ohmic Contacts to n-GaN
作者: Lin, Yow-Jon;Chen, Yao-Ming;Cheng, Tzyy-Jon;Ker, Quantum
贡献者: 光電科技研究所
关键词: Titanium;Gallium compounds;III-V semiconductors;Wide band gap semiconductors;Semiconductor-metal boundaries;Ohmic contacts;Schottky barriers;Vacancies (crystal);X-ray photoelectron spectra;Annealing;Interface states;Defect states;Fermi level;Tunnelling
日期: 2004-01
上传时间: 2013-10-02T08:35:59Z
出版者: American Institute of Physics
摘要: The relationship between the Schottky barrier height and nitrogen–vacancy-related defects in Ti alloyed Ohmic contacts to n-type GaN (n-GaN) has been investigated using x-ray photoelectron spectroscopy measurements. It is shown that the alloyed Ohmic behavior of the contacts can be attributed to the presence of a large number of nitrogen–vacancy-related defects and not to the formation of lower barriers at the annealed Ti/n-GaN interface. The large number of interface states, related to the nitrogen–vacancy defects has led to the pinning of the Fermi level at 0.5 eV below the conduction-band edge, and has left the GaN surface very heavily n type, thereby forming a tunneling junction.
關聯: Journal of Applied Physics, 95(2): 571-575
显示于类别:[光電科技研究所] 期刊論文

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