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题名: Electrical Properties of Pt Contacts on p-GaN Activated in Air
作者: Lin, Yow-Jon;Wu, Kuo-Chen
贡献者: 光電科技研究所
关键词: Platinum;Gallium compounds;III-V semiconductors;Wide band gap semiconductors;Semiconductor epitaxial layers;Electrical resistivity;Photoluminescence;Ohmic contacts;Fermi level;Semiconductor-metal boundaries
日期: 2004-03
上传时间: 2013-10-02T08:36:00Z
出版者: American Institute of Physics
摘要: In this study, the electrical properties of Pt contacts on p-type GaN (p-GaN) activated in air were investigated. From the observed photoluminescence result, it is suggested that the hydrogenated Ga vacancies (i.e., VGaH2) were formed during the activation process. However, VGaH2 in p-GaN near the surface was transformed into VGa after Pt deposition, because Pt strongly absorbed hydrogen. A large number of VGa at the Pt/p-GaN interface would lead to the pinning of the Fermi level at 0.3 eV above the valence-band edge, as well as the formation of the low barrier at the interface, and the formation of the nonalloyed ohmic contacts due to the occurrence of the tunneling transmission for holes at the interface.
關聯: Applied Physics Letters, 84(9): 1501-1503
显示于类别:[光電科技研究所] 期刊論文


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