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Title: Activation Mechanism of Annealed Mg-doped GaN in Air
Authors: Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: Gallium compounds;Magnesium;Hydrogen;III-V semiconductors;Wide band gap semiconductors;Semiconductor epitaxial layers;Annealing;Interstitials;Desorption;Dissociation;Surface chemistry;Impurity distribution;Photoluminescence;Secondary ion mass spectra
Date: 2004-04
Issue Date: 2013-10-02T08:36:01Z
Publisher: American Institute of Physics
Abstract: In this study, the activation mechanism of annealed Mg-doped GaN in air and the influence of ambient on activation of Mg-doped GaN were investigated. According to the experimental results, we found that the dissociation of MgGa–H, and the formation of hydrogenated gallium vacancies (VGaH2) and gallium vacancies occupied by interstitial Mg during the air-activation process, led to an increase in the hole concentration. In addition, from the observed photoluminescence results and the secondary ion mass spectroscopy measurements, it is suggested that the formation of VGaH2 will result in an enhancement of hydrogen desorption from the MgGa–H complexes.
Relation: Applied Physics Letters, 84(15): 2760-2762
Appears in Collections:[Graduate Institute of Photonics Technologies] Periodical Articles

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