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题名: Excimer-laser-induced Activation of Mg-doped GaN Layers
作者: Lin, Yow-Jon;Liu, Wen-Fung;Lee, Ching-Ting
贡献者: 光電科技研究所
关键词: Gallium compounds;Magnesium;III-V semiconductors;Wide band gap semiconductors;Semiconductor epitaxial layers;Photoluminescence;Dissociation;Hydrogenation;Vacancies (crystal);Interstitials;Laser beam effects;Hole density;X-ray photoelectron spectra
日期: 2004-04
上传时间: 2013-10-02T08:36:02Z
出版者: American Institute of Physics
摘要: In this study, we investigated the 248 nm excimer-laser-induced activation of the Mg-doped GaN layers. According to the observed photoluminescence results and the x-ray photoelectron spectroscopy measurements, we found that the dissociation of the Mg–H complexes and the formation of hydrogenated Ga vacancies (i.e., VGaH2) and/or the Ga vacancies occupied by interstitial Mg during the laser irradiation process, led to an increase in the hole concentration.
關聯: Applied Physics Letters, 84(14): 2515-2517
显示于类别:[光電科技研究所] 期刊論文


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