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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17378

Title: Comment on “Interpretation of Fermi Level Pinning on 4H–SiC using Synchrotron Photoemission Spectroscopy” [Appl. Phys. Lett. 84, 538 (2004)]
Authors: Lin, Yow-Jon;Tseng, Chih-Kuo
Contributors: 光電科技研究所
Keywords: Silicon compounds;Wide band gap semiconductors;Fermi level;Schottky barriers;X-ray photoelectron spectra
Date: 2004-09
Issue Date: 2013-10-02T08:36:03Z
Publisher: American Institute of Physics
Relation: Applied Physics Letters, 85(13): 2661-2662
Appears in Collections:[光電科技研究所] 期刊論文

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