National Changhua University of Education Institutional Repository : Item 987654321/17378

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NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17378

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17378

Title:	Comment on “Interpretation of Fermi Level Pinning on 4H–SiC using Synchrotron Photoemission Spectroscopy” [Appl. Phys. Lett. 84, 538 (2004)]
Authors:	Lin, Yow-Jon;Tseng, Chih-Kuo
Contributors:	光電科技研究所
Keywords:	Silicon compounds;Wide band gap semiconductors;Fermi level;Schottky barriers;X-ray photoelectron spectra
Date:	2004-09
Issue Date:	2013-10-02T08:36:03Z
Publisher:	American Institute of Physics
Relation:	Applied Physics Letters, 85(13): 2661-2662
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

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