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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17379

Title: Study of Schottky Barrier Heights of Indium-Tin-Oxide on p-GaN Using X-ray Photoelectron Spectroscopy and Current-Voltage Measurements
Authors: Lin, Yow-Jon;Hsu, Chou-Wei
Contributors: 光電科技研究所
Keywords: Gallium nitride (GaN);Indium-tin-oxide (ITO);Schottky barrier height;Thermionic field emission (TFE);X-ray photoelectron spectroscopy (XPS)
Date: 2004-09
Issue Date: 2013-10-02T08:36:06Z
Publisher: Springer-Verlag
Abstract: diodes of indium-tin-oxide (ITO) contacts to p-type GaN (p-GaN) has been investigated. The calculated barrier-height value of ITO/p-GaN samples using the thermionic field-emission (TFE) model is 3.2 eV, which implies that the work function of ITO is equal to 4.3 eV. The result is supported by J-V measurements of ITO/n-type GaN Schottky diodes. On the other hand, the barrier height of ITO/p-GaN was also determined from x-ray photoelectron spectroscopy (XPS) data. The analysis of the XPS spectral shifts indicated that this observed barrier-height value of ITO/p-GaN by XPS is in good agreement with the value of 3.2 eV obtained from J-V measurements.
Relation: Journal of Electronic Materials, 33(9): 1036-1040
Appears in Collections:[光電科技研究所] 期刊論文

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