National Changhua University of Education Institutional Repository : Item 987654321/17379
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6491/11663
造访人次 : 25195012      在线人数 : 71
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻


题名: Study of Schottky Barrier Heights of Indium-Tin-Oxide on p-GaN Using X-ray Photoelectron Spectroscopy and Current-Voltage Measurements
作者: Lin, Yow-Jon;Hsu, Chou-Wei
贡献者: 光電科技研究所
关键词: Gallium nitride (GaN);Indium-tin-oxide (ITO);Schottky barrier height;Thermionic field emission (TFE);X-ray photoelectron spectroscopy (XPS)
日期: 2004-09
上传时间: 2013-10-02T08:36:06Z
出版者: Springer-Verlag
摘要: diodes of indium-tin-oxide (ITO) contacts to p-type GaN (p-GaN) has been investigated. The calculated barrier-height value of ITO/p-GaN samples using the thermionic field-emission (TFE) model is 3.2 eV, which implies that the work function of ITO is equal to 4.3 eV. The result is supported by J-V measurements of ITO/n-type GaN Schottky diodes. On the other hand, the barrier height of ITO/p-GaN was also determined from x-ray photoelectron spectroscopy (XPS) data. The analysis of the XPS spectral shifts indicated that this observed barrier-height value of ITO/p-GaN by XPS is in good agreement with the value of 3.2 eV obtained from J-V measurements.
關聯: Journal of Electronic Materials, 33(9): 1036-1040
显示于类别:[光電科技研究所] 期刊論文


档案 大小格式浏览次数



DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈