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Please use this identifier to cite or link to this item:
http://ir.ncue.edu.tw/ir/handle/987654321/17380
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| Title: | Electrical Properties of Ni/Au and Au Contacts on p-type GaN |
| Authors: | Lin, Yow-Jon |
| Contributors: | 光電科技研究所 |
| Keywords: | Gallium compounds;Nickel;Gold;III-V semiconductors;Ohmic contacts;Desorption;Secondary ion mass spectra;Tunnelling;Semiconductor-metal boundaries |
| Date: | 2005-01
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| Issue Date: | 2013-10-02T08:36:07Z
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| Publisher: | American Vacuum Society |
| Abstract: | The electrical properties of Ni/Au and Au contacts on p-type GaN (p-GaN) were investigated in this study. From the experimental result, it is suggested that the current–voltage characteristic of Au/Ni/p-GaN is better than that of Au/p-GaN. The secondary-ion mass spectroscopy measurements revealed that hydrogen is effectively removed from the p-GaN layer by the existence of the Ni film. These results suggest that a Ni film of Au/Ni/p-GaN significantly enhances hydrogen desorption from the p-GaN film, which leads to an increase in the hole concentration, the occurrence of the tunneling transmission for holes at the interface, and the improvement of electrical properties of Au/Ni/p-GaN. |
| Relation: | Journal of Vacuum Science & Technology B, 23(1): 48-50 |
| Appears in Collections: | [光電科技研究所] 期刊論文
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Size | Format | |
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| 2020600310002.pdf | 28Kb | Adobe PDF | 341 | View/Open |
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