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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17380

Title: Electrical Properties of Ni/Au and Au Contacts on p-type GaN
Authors: Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: Gallium compounds;Nickel;Gold;III-V semiconductors;Ohmic contacts;Desorption;Secondary ion mass spectra;Tunnelling;Semiconductor-metal boundaries
Date: 2005-01
Issue Date: 2013-10-02T08:36:07Z
Publisher: American Vacuum Society
Abstract: The electrical properties of Ni/Au and Au contacts on p-type GaN (p-GaN) were investigated in this study. From the experimental result, it is suggested that the current–voltage characteristic of Au/Ni/p-GaN is better than that of Au/p-GaN. The secondary-ion mass spectroscopy measurements revealed that hydrogen is effectively removed from the p-GaN layer by the existence of the Ni film. These results suggest that a Ni film of Au/Ni/p-GaN significantly enhances hydrogen desorption from the p-GaN film, which leads to an increase in the hole concentration, the occurrence of the tunneling transmission for holes at the interface, and the improvement of electrical properties of Au/Ni/p-GaN.
Relation: Journal of Vacuum Science & Technology B, 23(1): 48-50
Appears in Collections:[光電科技研究所] 期刊論文

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