National Changhua University of Education Institutional Repository : Item 987654321/17380
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題名: Electrical Properties of Ni/Au and Au Contacts on p-type GaN
作者: Lin, Yow-Jon
貢獻者: 光電科技研究所
關鍵詞: Gallium compounds;Nickel;Gold;III-V semiconductors;Ohmic contacts;Desorption;Secondary ion mass spectra;Tunnelling;Semiconductor-metal boundaries
日期: 2005-01
上傳時間: 2013-10-02T08:36:07Z
出版者: American Vacuum Society
摘要: The electrical properties of Ni/Au and Au contacts on p-type GaN (p-GaN) were investigated in this study. From the experimental result, it is suggested that the current–voltage characteristic of Au/Ni/p-GaN is better than that of Au/p-GaN. The secondary-ion mass spectroscopy measurements revealed that hydrogen is effectively removed from the p-GaN layer by the existence of the Ni film. These results suggest that a Ni film of Au/Ni/p-GaN significantly enhances hydrogen desorption from the p-GaN film, which leads to an increase in the hole concentration, the occurrence of the tunneling transmission for holes at the interface, and the improvement of electrical properties of Au/Ni/p-GaN.
關聯: Journal of Vacuum Science & Technology B, 23(1): 48-50
顯示於類別:[光電科技研究所] 期刊論文

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