English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6491/11663
Visitors : 25160389      Online Users : 353
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17381

Title: Application of the Thermionic Field Emission Model in the Study of a Schottky Barrier of Ni on p-GaN from Current–Voltage Measurements
Authors: Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: Nickel;Gallium compounds;Magnesium;III-V semiconductors;Wide band gap semiconductors;Semiconductor epitaxial layers;Field emission;Thermionic emission;Schottky diodes;Schottky barriers;Valence bands;Deep levels;Defect states;MOCVD coatings;Core levels;X-ray photoelectron spectra;Semiconductor device models
Date: 2005-03
Issue Date: 2013-10-02T08:36:18Z
Publisher: American Institute of Physics
Abstract: Barrier height values of Ni contacts to Mg-doped p-type GaN (p-GaN) were obtained from current–voltage measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission. It also resulted in an increase in current flow under forward bias condition, which was not analyzed using the thermionic emission model. Further, the calculated barrier height value of Ni contacts to p-GaN using the thermionic field emission model is in good agreement with the value of 1.9 eV obtained from x-ray photoelectron spectroscopy measurements.
Relation: Applied Physics Letters, 86(12): 122109
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat

All items in NCUEIR are protected by copyright, with all rights reserved.


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback