National Changhua University of Education Institutional Repository : Item 987654321/17381
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题名: Application of the Thermionic Field Emission Model in the Study of a Schottky Barrier of Ni on p-GaN from Current–Voltage Measurements
作者: Lin, Yow-Jon
贡献者: 光電科技研究所
关键词: Nickel;Gallium compounds;Magnesium;III-V semiconductors;Wide band gap semiconductors;Semiconductor epitaxial layers;Field emission;Thermionic emission;Schottky diodes;Schottky barriers;Valence bands;Deep levels;Defect states;MOCVD coatings;Core levels;X-ray photoelectron spectra;Semiconductor device models
日期: 2005-03
上传时间: 2013-10-02T08:36:18Z
出版者: American Institute of Physics
摘要: Barrier height values of Ni contacts to Mg-doped p-type GaN (p-GaN) were obtained from current–voltage measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission. It also resulted in an increase in current flow under forward bias condition, which was not analyzed using the thermionic emission model. Further, the calculated barrier height value of Ni contacts to p-GaN using the thermionic field emission model is in good agreement with the value of 1.9 eV obtained from x-ray photoelectron spectroscopy measurements.
關聯: Applied Physics Letters, 86(12): 122109
显示于类别:[光電科技研究所] 期刊論文

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