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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17384

Title: Comment on “Unraveling the Conduction Mechanism of Al-doped ZnO Films by Valence Band Soft x-ray Photoemission Spectroscopy” [ Appl. Phys. Lett. 86, 042104 (2005) ]
Authors: Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: Aluminium;Zinc compounds;II-VI semiconductors;Wide band gap semiconductors;Semiconductor thin films;X-ray photoelectron spectra;Valence bands, energy gap;Photoluminescence
Date: 2005-05
Issue Date: 2013-10-02T08:36:20Z
Publisher: American Institute of Physics
Relation: Applied Physics Letters, 86(21): 216101
Appears in Collections:[光電科技研究所] 期刊論文

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