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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17385

Title: Optical and Electrical Properties of Heavily Mg-doped GaN upon (NH4)2Sx Treatment
Authors: Lin, Yow-Jon;Chu, Yow-Lin;Huang, Y. S.;Chang, Hsing-Cheng
Contributors: 光電科技研究所
Keywords: Magnesium;Gallium compounds;Wide band gap semiconductors;III-V semiconductors;Photoluminescence;Vacancies (crystal);Semiconductor doping;Semiconductor epitaxial layers;Surface treatment
Date: 2005-05
Issue Date: 2013-10-02T08:36:21Z
Publisher: American Institute of Physics
Abstract: We have employed the photoluminescence (PL) and surface photovoltage spectroscopy (SPS) measurements to study the effects of (NH4)2Sx treatment on the optical and electrical properties of p-type GaN (p-GaN) in this study. From the PL and SPS measurements, it is suggested that the (MgGa–VN)2+ (MgGa:Ga vacancies occupied by Mg; VN:nitrogen vacancies) complexes near the p-GaN surface region were transformed into the (MgGa-SN)0 (SN:N vacancies occupied by S) complexes after (NH4)2Sx treatment, which resulted in the reduction of the ∼ 2.8-eV PL intensity and the increase of the hole concentration near the p-GaN surface region.
Relation: Applied Physics Letters, 86(20): 202107
Appears in Collections:[光電科技研究所] 期刊論文

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