National Changhua University of Education Institutional Repository : Item 987654321/17385
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 29709843      在线人数 : 426
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/17385

题名: Optical and Electrical Properties of Heavily Mg-doped GaN upon (NH4)2Sx Treatment
作者: Lin, Yow-Jon;Chu, Yow-Lin;Huang, Y. S.;Chang, Hsing-Cheng
贡献者: 光電科技研究所
关键词: Magnesium;Gallium compounds;Wide band gap semiconductors;III-V semiconductors;Photoluminescence;Vacancies (crystal);Semiconductor doping;Semiconductor epitaxial layers;Surface treatment
日期: 2005-05
上传时间: 2013-10-02T08:36:21Z
出版者: American Institute of Physics
摘要: We have employed the photoluminescence (PL) and surface photovoltage spectroscopy (SPS) measurements to study the effects of (NH4)2Sx treatment on the optical and electrical properties of p-type GaN (p-GaN) in this study. From the PL and SPS measurements, it is suggested that the (MgGa–VN)2+ (MgGa:Ga vacancies occupied by Mg; VN:nitrogen vacancies) complexes near the p-GaN surface region were transformed into the (MgGa-SN)0 (SN:N vacancies occupied by S) complexes after (NH4)2Sx treatment, which resulted in the reduction of the ∼ 2.8-eV PL intensity and the increase of the hole concentration near the p-GaN surface region.
關聯: Applied Physics Letters, 86(20): 202107
显示于类别:[光電科技研究所] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML1037检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈