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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17386

Title: Effect of Reactive Ion Etching-induced Defects on the Surface Band Bending of Heavily Mg-doped p-type GaN
Authors: Lin, Yow-Jon;Chu, Yow-Lin
Contributors: 光電科技研究所
Keywords: Gallium compounds;Gold;Nickel;Magnesium;III-V semiconductors;Wide band gap semiconductors;Semiconductor epitaxial layers;Sputter etching;Schottky barriers;Leakage currents;Vacancies (crystal);Electrical conductivity;Semiconductor-metal boundaries;Impurity-defect interactions;X-ray photoelectron spectra;Secondary ion mass spectra;Heavily doped semiconductors
Date: 2005-05
Issue Date: 2013-10-02T08:36:22Z
Publisher: American Institute of Physics
Abstract: The effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p-type GaN (p‐GaN) was investigated in this study. According to the observed results from x-ray photoelectron spectroscopy and secondary-ion-mass spectroscopy (SIMS) measurements, we found that the formation of more nitrogen-vacancy-related defects created near the surface by reactive ion etching technique would lead to an increase in the surface band bending, a shift of the surface Fermi level toward the conduction-band edge, the reduction of the current flow at the metal∕etched p‐GaN interface, and an increase in the barrier height at the metal∕etched p‐GaN interface. In addition, from the SIMS measurements, it is suggested that the depth of the nitrogen-deficient near-surface region resulting from the dry-etch process is about 60 nm.
Relation: Journal of Applied Physics, 97(10): 104904
Appears in Collections:[光電科技研究所] 期刊論文

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