English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6469/11641
Visitors : 19713169      Online Users : 352
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17390

Title: Changes in Optical and Electrical Properties and Surface Recombination Velocity of n-type GaN Due to (NH4)2Sx Treatment
Authors: Lin, Yow-Jon;Lin, Wen-Xiang;Lee, Ching-Ting;Chien, Feng-Tso
Contributors: 光電科技研究所
Keywords: A. Semiconductors;D. Optical properties;A. Surfaces and interfaces
Date: 2006-02
Issue Date: 2013-10-02T08:36:35Z
Publisher: Elsevier B. V.
Abstract: We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS) and Hall effect measurements to study the effects of (NH4)2Sx treatment on the optical and electrical properties of n-type GaN (n-GaN) in this study. (NH4)2Sx treatment of n-GaN led to the decrease of the surface recombination velocity and the increase of the band-edge emission intensity, due to the accumulation of majority carriers and the repulsion of minority carriers near the (NH4)2Sx-treated n-GaN surface, the removal of the native oxide existed on the n-GaN, and sulfur passivation.
Relation: Solid State Communications, 137(5): 257-259
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML378View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback