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Title: Changes in Optical and Electrical Properties and Surface Recombination Velocity of n-type GaN Due to (NH4)2Sx Treatment
Authors: Lin, Yow-Jon;Lin, Wen-Xiang;Lee, Ching-Ting;Chien, Feng-Tso
Contributors: 光電科技研究所
Keywords: A. Semiconductors;D. Optical properties;A. Surfaces and interfaces
Date: 2006-02
Issue Date: 2013-10-02T08:36:35Z
Publisher: Elsevier B. V.
Abstract: We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS) and Hall effect measurements to study the effects of (NH4)2Sx treatment on the optical and electrical properties of n-type GaN (n-GaN) in this study. (NH4)2Sx treatment of n-GaN led to the decrease of the surface recombination velocity and the increase of the band-edge emission intensity, due to the accumulation of majority carriers and the repulsion of minority carriers near the (NH4)2Sx-treated n-GaN surface, the removal of the native oxide existed on the n-GaN, and sulfur passivation.
Relation: Solid State Communications, 137(5): 257-259
Appears in Collections:[Graduate Institute of Photonics Technologies] Periodical Articles

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