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题名: Changes in Optical and Electrical Properties and Surface Recombination Velocity of n-type GaN Due to (NH4)2Sx Treatment
作者: Lin, Yow-Jon;Lin, Wen-Xiang;Lee, Ching-Ting;Chien, Feng-Tso
贡献者: 光電科技研究所
关键词: A. Semiconductors;D. Optical properties;A. Surfaces and interfaces
日期: 2006-02
上传时间: 2013-10-02T08:36:35Z
出版者: Elsevier B. V.
摘要: We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS) and Hall effect measurements to study the effects of (NH4)2Sx treatment on the optical and electrical properties of n-type GaN (n-GaN) in this study. (NH4)2Sx treatment of n-GaN led to the decrease of the surface recombination velocity and the increase of the band-edge emission intensity, due to the accumulation of majority carriers and the repulsion of minority carriers near the (NH4)2Sx-treated n-GaN surface, the removal of the native oxide existed on the n-GaN, and sulfur passivation.
關聯: Solid State Communications, 137(5): 257-259
显示于类别:[光電科技研究所] 期刊論文


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