English  |  正體中文  |  简体中文  |  Items with full text/Total items : 6481/11653
Visitors : 23376593      Online Users : 246
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search
LoginUploadHelpAboutAdminister

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17393

Title: Induced Changes in Surface Band Bending of n-type and p-type AlGaN by Oxidation and Wet Chemical Treatments
Authors: Lin, Yow-Jon;Chu, Yow-Lin;Lin, Wen-Xiang;Chien, Feng-Tso;Lee, Chi-Sen
Contributors: 光電科技研究所
Keywords: Aluminium compounds;Gallium compounds;III-V semiconductors;Oxidation;Surface chemistry;X-ray photoelectron spectra;Fermi level;Surface states;Valence bands;Vacancies (crystal)
Date: 2006-04
Issue Date: 2013-10-02T08:36:38Z
Publisher: American Institute of Physics
Abstract: The surface chemistry and electrical properties of p-type and n-type AlGaN surfaces were studied via x-ray photoelectron spectroscopy before and after oxidation and wet chemical treatments. Shifts in the surface Fermi level were measured with the change in onset of the valence-band spectra. Oxidation and HF and (NH4)2Sx treatments on p-type AlGaN (n-type AlGaN) led to an increase (the reduction) in the surface band bending due to more N vacancies and N vacancies being occupied by S (i.e., donorlike states) than Al vacancies and Ga vacancies (i.e., acceptorlike states) near the p-type AlGaN (n-type AlGaN) surface region. The changes in surface chemistry indicate that oxidation and wet chemical treatments alter the surface state density through the formation of more donorlike states.
Relation: Journal of Applied Physics, 99(7): 073702
Appears in Collections:[光電科技研究所] 期刊論文

Files in This Item:

File SizeFormat
index.html0KbHTML357View/Open


All items in NCUEIR are protected by copyright, with all rights reserved.

 


DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback