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题名: Induced Changes in Surface Band Bending of n-type and p-type AlGaN by Oxidation and Wet Chemical Treatments
作者: Lin, Yow-Jon;Chu, Yow-Lin;Lin, Wen-Xiang;Chien, Feng-Tso;Lee, Chi-Sen
贡献者: 光電科技研究所
关键词: Aluminium compounds;Gallium compounds;III-V semiconductors;Oxidation;Surface chemistry;X-ray photoelectron spectra;Fermi level;Surface states;Valence bands;Vacancies (crystal)
日期: 2006-04
上传时间: 2013-10-02T08:36:38Z
出版者: American Institute of Physics
摘要: The surface chemistry and electrical properties of p-type and n-type AlGaN surfaces were studied via x-ray photoelectron spectroscopy before and after oxidation and wet chemical treatments. Shifts in the surface Fermi level were measured with the change in onset of the valence-band spectra. Oxidation and HF and (NH4)2Sx treatments on p-type AlGaN (n-type AlGaN) led to an increase (the reduction) in the surface band bending due to more N vacancies and N vacancies being occupied by S (i.e., donorlike states) than Al vacancies and Ga vacancies (i.e., acceptorlike states) near the p-type AlGaN (n-type AlGaN) surface region. The changes in surface chemistry indicate that oxidation and wet chemical treatments alter the surface state density through the formation of more donorlike states.
關聯: Journal of Applied Physics, 99(7): 073702
显示于类别:[光電科技研究所] 期刊論文


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