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NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17394

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17394

Title:	Optical and Electrical Properties of Undoped ZnO Films
Authors:	Lin, Yow-Jon;Tsai, Chia-Lung;Lu, Yang-Ming;Liu, Chia-Jyi
Contributors:	光電科技研究所
Keywords:	Zinc compounds;II-VI semiconductors;Wide band gap semiconductors;Semiconductor thin films;Electrical conductivity;Photoluminescence;Vacancies (crystal);Deep levels
Date:	2006-05
Issue Date:	2013-10-02T08:36:39Z
Publisher:	American Institute of Physics
Abstract:	Optical and electrical properties of undoped ZnO films were investigated in this study. We find that the conductivity increased with increasing the ratio of (blue luminescence+green luminescence) to ultraviolet luminescence [i.e., (BL+GL)/UVL] defect emission intensities, due to the increase of the singly ionized oxygen vacancy. We deduce that the BL and GL are related to the oxygen-vacancy deep level and the yellow luminescence is attributed to the band-acceptor transition. We also find that poorer crystal quality may lead to the reduction of the optical transmittance. This suggests that these defects and the crystal quality interact to change the conductivity and optical transmittance of ZnO. The spectroscopic correlations may be used as a predictive tool to identify the quality of ZnO.
Relation:	Journal of Applied Physics, 99(9): 093501
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

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