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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17395

Title: Nonalloyed Ohmic Formation for p-type AlGaN with p-type GaN Capping Layers Using Ohmic Recessed Technique
Authors: Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: AlGaN;Ohmic contact;GaN;Specific contact resistance;Two-dimensional hole gas
Date: 2006-06
Issue Date: 2013-10-02T08:36:40Z
Publisher: The Japan Society of Applied Physics
Abstract: In this study, we report that the p-type GaN (p-GaN) capping layer grown on top of p-type AlGaN (p-AlGaN) and the fabrication of recessed channels are used to demonstrate a new type of nonalloyed ohmic contact. Because the p-GaN layer grown on p-AlGaN led to the formation of spontaneous polarization fields in p-GaN and the lower band bending of p-AlGaN resulting in the formation of a two-dimensional hole gas (2DHG). As a result, we deduce that holes can be easily injected into the p-AlGaN layer through recessed channels and a 2DHG channel, which results in nonalloyed ohmic formation.
Relation: Japanese Journal of Applied Physics, 45(3): L86-L88
Appears in Collections:[光電科技研究所] 期刊論文

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