National Changhua University of Education Institutional Repository : Item 987654321/17396
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6491/11663
造访人次 : 24907213      在线人数 : 42
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻


题名: Optical Properties of Heavily Mg-Doped p-GaN Films Prepared by Reactive Ion Etching
作者: Lin, Yow-Jon;Chu, Yow-Lin;Liu, Day-Shan;Lee, Chi-Sen;Chien, Feng-Tso
贡献者: 光電科技研究所
关键词: GaN;Photoluminescence;Reactive ion etching;Donor-acceptor pair;Nitrogen vacancy
日期: 2006-06
上传时间: 2013-10-02T08:36:41Z
出版者: The Japan Society of Applied Physics
摘要: The effect of the damage caused by reactive ion etching on the optical properties of heavily Mg-doped p-type GaN (p-GaN) was investigated in this study. After etching, we found that the blue luminescence (BL) is redshifted and the intensity of the redshifted BL is markedly increased at room temperature, which are attributed to the formation of the lattice disorder resulting in the domination of distant donor–acceptor pairs (DAPs) and the formation of more nitrogen-vacancy-related defects resulting in more recombination centers D responsible for DAP transition.
關聯: Japanese Journal of Applied Physics, 45(1A): 64-66
显示于类别:[光電科技研究所] 期刊論文


档案 大小格式浏览次数



DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈