National Changhua University of Education Institutional Repository : Item 987654321/17397
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題名: Effects of the Thickness of Capping Layers on Electrical Properties of Ni Ohmic Contacts on p-AlGaN and p-GaN using an Ohmic Recessed Technique
作者: Lin, Yow-Jon;Chu, Yow-Lin
貢獻者: 光電科技研究所
關鍵詞: Semiconductors;Surfaces, interfaces and thin films
日期: 2006-08
上傳時間: 2013-10-02T08:36:41Z
出版者: IOP Publishing Ltd
摘要: In this study, the effects of the thickness of p-GaN (p-InGaN) capping layers grown on top of p-AlGaN (p-GaN) on electrical properties of Ni ohmic contacts on p-AlGaN (p-GaN) were investigated. The experiments and simulations indicated that the thicker p-GaN (p-InGaN) capping layer grown on p-AlGaN (p-GaN) led to the formation of the higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. Consequently, we deduce that holes can be easily injected into the p-AlGaN (p-GaN) layer through recessed channels and a 2DHG channel, which results in the formation of the low contact resistivity. This provides a rational guideline for the development of new processing methodologies to enhance nitride semiconductor-based optoelectronic devices.
關聯: Semiconductor Science Technology, 21(8): 1172-1175
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