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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17398

Title: Changes in Activation Energies of Donors and Carrier Concentration in Si-doped n-type GaN Due to (NH4)2Sx Treatment
Authors: Lin, Yow-Jon;Lee, Ching-Ting;Chang, Hsing-Cheng
Contributors: 光電科技研究所
Keywords: Condensed matter: electrical, magnetic and optical;Semiconductors;Surfaces, interfaces and thin films
Date: 2006-08
Issue Date: 2013-10-02T08:36:42Z
Publisher: IOP Publishing Ltd
Abstract: In this study, changes in the activation energy of donors and carrier concentration in n-type GaN (n-GaN) samples, due to (NH4)2Sx treatment, were investigated. We find that the activation energy of Si in the n-GaN samples without or with (NH4)2Sx treatment was determined to be 21 meV and a donor level was also present in (NH4)2Sx-treated n-GaN near the surface with an activation energy of 59 meV which is associated with sulfur donors substituting for nitrogen. By rearranging the well-known equations for the conductivity and mobility in two-layer systems, we find that the electron concentration within the thin sulfur-passivated layer in n-GaN near the surface at room temperature increased from its original value 6.9 × 1017 cm−3 to 9.7 × 1019 cm−3, resulting in the occurrence of the Burstein–Moss shift for optical band-gap observation.
Relation: Semiconductor Science Technology, 21(8): 1167-1171
Appears in Collections:[光電科技研究所] 期刊論文

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