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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17399

Title: Improvement of Ni Nonalloyed Ohmic Contacts on p-GaN Films by Changing Thickness of p-InGaN Capping Layers
Authors: Chu, Yow-Lin;Lin, Yow-Jon;Ho, Cheng-Hsiang;Chen, Wei-Li
Contributors: 光電科技研究所
Keywords: GaN;InGaN;Ohmic contact;Two-dimensional hole gas;Specific contact resistance
Date: 2006-09
Issue Date: 2013-10-02T08:36:43Z
Publisher: The Japan Society of Applied Physics
Abstract: The influence of the thickness of p-type InGaN (p-InGaN) capping layers grown on p-type GaN (p-GaN) on the electrical properties of Ni contacts on p-GaN was investigated in this study. Experiments and simulations indicated that a thicker p-InGaN capping layer grown on p-GaN led to the formation of a higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. In addition, owing to a low barrier at the interfaces, holes can be easily injected into the p-GaN layer through recessed channels and a 2DHG channel, resulting in the formation of nonalloyed ohmic contacts with a low specific contact resistance of 1.7×10-5 Ω cm2.
Relation: Japanese Journal of Applied Physics, 45(9A): 6884-6887
Appears in Collections:[光電科技研究所] 期刊論文

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