National Changhua University of Education Institutional Repository : Item 987654321/17402

English | 正體中文 | 简体中文 | Items with full text/Total items : 6507/11669
Visitors : 30038569 Online Users : 566

RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.

Scope Adv. Search

Login ‧ Upload ‧ Help ‧ About ‧ Administer

NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17402

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17402

Title:	Hole-transport Barrier and Band Bending at the Indium tin Oxide/Polymer/p-AlGaN Interface
Authors:	Lin, Yow-Jon
Contributors:	光電科技研究所
Keywords:	Indium compounds;Polymer films;Aluminium compounds;Gallium compounds;III-V semiconductors;Wide band gap semiconductors;Ohmic contacts;X-ray photoelectron spectra;Interface states
Date:	2006-10
Issue Date:	2013-10-02T08:36:46Z
Publisher:	American Institute of Physics
Abstract:	Nonalloyed Ohmic contacts on p-AlGaN were achieved using a thin polymer film [i.e., poly(3,4-ethylenedioxythiophene) (PEDOT) doped with poly(4-styrenesulfonate)] as an interlayer for the electronic modification of indium tin oxide/p-AlGaN contacts. The electronic properties were investigated by current-voltage measurements and x-ray photoelectron spectroscopy (XPS). According to XPS measurements, the authors found a slight reduction in the surface band bending of p-AlGaN following PEDOT coating and the disappearance of the barrier for hole transport at indium tin oxide/PEDOT/p-AlGaN interfaces.
Relation:	Applied Physics Letters, 89(15): 152121
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

Files in This Item:

File	Size	Format
index.html	0Kb	HTML	615	View/Open