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题名: Hole-transport Barrier and Band Bending at the Indium tin Oxide/Polymer/p-AlGaN Interface
作者: Lin, Yow-Jon
贡献者: 光電科技研究所
关键词: Indium compounds;Polymer films;Aluminium compounds;Gallium compounds;III-V semiconductors;Wide band gap semiconductors;Ohmic contacts;X-ray photoelectron spectra;Interface states
日期: 2006-10
上传时间: 2013-10-02T08:36:46Z
出版者: American Institute of Physics
摘要: Nonalloyed Ohmic contacts on p-AlGaN were achieved using a thin polymer film [i.e., poly(3,4-ethylenedioxythiophene) (PEDOT) doped with poly(4-styrenesulfonate)] as an interlayer for the electronic modification of indium tin oxide/p-AlGaN contacts. The electronic properties were investigated by current-voltage measurements and x-ray photoelectron spectroscopy (XPS). According to XPS measurements, the authors found a slight reduction in the surface band bending of p-AlGaN following PEDOT coating and the disappearance of the barrier for hole transport at indium tin oxide/PEDOT/p-AlGaN interfaces.
關聯: Applied Physics Letters, 89(15): 152121
显示于类别:[光電科技研究所] 期刊論文


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