National Changhua University of Education Institutional Repository : Item 987654321/17403
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題名: Comment on “Contact Mechanisms and Design Principles for Alloyed Ohmic Contacts to n-GaN” [ J. Appl. Phys. 95, 7940 (2004) ]
作者: Lin, Yow-Jon
貢獻者: 光電科技研究所
關鍵詞: Gallium compounds;III-V semiconductors;Wide band gap semiconductors;Ohmic contacts;Tunnelling;Electrical resistivity;Thermionic electron emission;Energy gap
日期: 2006-10
上傳時間: 2013-10-02T08:36:46Z
出版者: American Institute of Physics
摘要: The contact mechanism and design principles for alloyed Ohmic contacts to n-GaN were investigated in Mohammad’s paper [ J. Appl. Phys. 95, 7940 (2004) ]. Mohammad’s study demonstrated that both tunneling and thermionic emission were equally important for low resistivity at the metals/n-GaN interfaces. As regards this Comment, we point out the fundamental errors of this interpretation. In addition, we find that the results shown in Figs. 3–6 of Mohammad’s paper are incorrect because the lower effective barrier height (BH) of less than 0 eV (due to the induced BH reduction by image force lowering or band gap narrowing) and a variable (c1) were neglected by the author.
關聯: Journal of Applied Physics, 100(7): 073707
顯示於類別:[光電科技研究所] 期刊論文

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