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NCUEIR > College of Science > Graduate Institute of Photonics Technologies > Periodical Articles > Item 987654321/17404

Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17404

Title:	True Dipole at the Indium Tin Oxide/Organic Semiconductor Interface
Authors:	Lin, Yow-Jon;Hong, Jia-huang;Lien, Yi-Chun;Liu, Bei-Yuan
Contributors:	光電科技研究所
Keywords:	Indium compounds;Organic semiconductors;Semiconductor thin films;Ultraviolet photoelectron spectra;X-ray photoelectron spectra;Bonds (chemical);Work function;Binding energy;Interface states
Date:	2006-12
Issue Date:	2013-10-02T08:36:48Z
Publisher:	American Institute of Physics
Abstract:	There has been long-standing interest in the development of organic optoelectronic devices. However, the authors find that the previously reported interface-dipole calculations seem to be inaccurate, owing to a persistent neglect of the induced band bending of indium tin oxide (ITO) by coating of organic semiconductors on ITO. In this study, the correlation between the induced band bending of ITO in the presence of organic semiconductors on ITO and the dipole at the interface was examined.
Relation:	Applied Physics Letters, 89(26): 262110
Appears in Collections:	[Graduate Institute of Photonics Technologies] Periodical Articles

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