National Changhua University of Education Institutional Repository : Item 987654321/17404
English  |  正體中文  |  简体中文  |  全文笔数/总笔数 : 6507/11669
造访人次 : 29958907      在线人数 : 450
RC Version 3.2 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜寻范围 进阶搜寻

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.ncue.edu.tw/ir/handle/987654321/17404

题名: True Dipole at the Indium Tin Oxide/Organic Semiconductor Interface
作者: Lin, Yow-Jon;Hong, Jia-huang;Lien, Yi-Chun;Liu, Bei-Yuan
贡献者: 光電科技研究所
关键词: Indium compounds;Organic semiconductors;Semiconductor thin films;Ultraviolet photoelectron spectra;X-ray photoelectron spectra;Bonds (chemical);Work function;Binding energy;Interface states
日期: 2006-12
上传时间: 2013-10-02T08:36:48Z
出版者: American Institute of Physics
摘要: There has been long-standing interest in the development of organic optoelectronic devices. However, the authors find that the previously reported interface-dipole calculations seem to be inaccurate, owing to a persistent neglect of the induced band bending of indium tin oxide (ITO) by coating of organic semiconductors on ITO. In this study, the correlation between the induced band bending of ITO in the presence of organic semiconductors on ITO and the dipole at the interface was examined.
關聯: Applied Physics Letters, 89(26): 262110
显示于类别:[光電科技研究所] 期刊論文

文件中的档案:

档案 大小格式浏览次数
index.html0KbHTML655检视/开启


在NCUEIR中所有的数据项都受到原著作权保护.

 

DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回馈