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Please use this identifier to cite or link to this item: http://ir.ncue.edu.tw/ir/handle/987654321/17408

Title: Comment on “Mechanism for the Increase of Indium-tin-oxide Work Function by O2 Inductively Coupled Plasma Treatment” [ J. Appl. Phys. 95, 586 (2004) ]
Authors: Lin, Yow-Jon
Contributors: 光電科技研究所
Keywords: Indium compounds;Semiconductor materials;Plasma materials processing;Surface treatment;Photoelectron spectra;Secondary electron emission;Electron affinity;Work function
Date: 2007-02
Issue Date: 2013-10-02T08:36:51Z
Publisher: American Institute of Physics
Abstract: A high work function on indium tin oxide (ITO) surfaces with O2 inductively coupled plasma (ICP) treatment was obtained in the paper: “Mechanism for the increase of indium tin oxide work function by O2 inductively coupled plasma treatment” [ Lee et al., J. Appl. Phys. 95, 586 (2004) ]. They attributed this to the higher work function of the larger upward band bending and the larger electron affinity of the ITO near the surface by the ICP treatment. In this Comment, we indicate the mistake in their analysis of the observed result by synchrotron radiation photoemission spectroscopy.
Relation: Journal of Applied Physics, 101(3): 036104
Appears in Collections:[光電科技研究所] 期刊論文

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